Well-aligned ZnO nanorods grown directly on GaN substrates for optoelectronic applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F16%3A00469666" target="_blank" >RIV/67985882:_____/16:00469666 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/NEMS.2016.7758226" target="_blank" >http://dx.doi.org/10.1109/NEMS.2016.7758226</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/NEMS.2016.7758226" target="_blank" >10.1109/NEMS.2016.7758226</a>

Result language
angličtina
Original language name
Well-aligned ZnO nanorods grown directly on GaN substrates for optoelectronic applications
Original language description
We report on the hydrothermal growth of ZnO nanorods directly on GaN templates with a different density of dislocations. The influence of the quality of the GaN substrate on morphological and optical properties of ZnO nanorods is presented. The morphology of the ZnO nanorods was investigated by scanning electron microscopy while the optical properties were studied by low temperature photoluminescence spectroscopy. To control the position and size of the ZnO nanorods, the GaN templates were patterned by e-beam lithography
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
ISBN
978-1-5090-1948-9
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
New York
Event location
Sendai
Event date
Apr 17, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000391893400040

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