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Embedded components in Photovia Substrates

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F12%3A43915605" target="_blank" >RIV/49777513:23220/12:43915605 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1109/ESTC.2012.6542190" target="_blank" >http://dx.doi.org/10.1109/ESTC.2012.6542190</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/ESTC.2012.6542190" target="_blank" >10.1109/ESTC.2012.6542190</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Embedded components in Photovia Substrates

  • Original language description

    This paper deals with the research and development of high density interconnection (HDI) substrates and passive components embedded into HDI substrates. Both HDI substrates and passive embedded components are fully formed by the photolithography method.The manufacturing process consists of screen printing process used for individual layers deposition and photolithography process for all layers structuring. The photosensitive dielectric material, used in these HDI substrates, was specially designed forthis application and consists of photoimageable photopolymer and ceramic filler. The manufacturing process of HDI substrates with embedded components was specified and verified. Impedance to frequency characteristic, capacity to temperature and capacityto voltage characteristic of embedded capacitors were measured in detail. Impedance to frequency characteristics were also measured for embedded inductors. Electrical parameters of embedded components were calculated as well.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    ESTC2012

  • ISBN

    978-1-4673-4644-3

  • ISSN

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    1-6

  • Publisher name

    IEEE

  • Place of publication

    345 E 47TH ST, NEW YORK, NY 10017 USA

  • Event location

    Amstrdam

  • Event date

    Sep 17, 2012

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000324550400139