Embedded components in Photovia Substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F12%3A43915605" target="_blank" >RIV/49777513:23220/12:43915605 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/ESTC.2012.6542190" target="_blank" >http://dx.doi.org/10.1109/ESTC.2012.6542190</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ESTC.2012.6542190" target="_blank" >10.1109/ESTC.2012.6542190</a>
Alternative languages
Result language
angličtina
Original language name
Embedded components in Photovia Substrates
Original language description
This paper deals with the research and development of high density interconnection (HDI) substrates and passive components embedded into HDI substrates. Both HDI substrates and passive embedded components are fully formed by the photolithography method.The manufacturing process consists of screen printing process used for individual layers deposition and photolithography process for all layers structuring. The photosensitive dielectric material, used in these HDI substrates, was specially designed forthis application and consists of photoimageable photopolymer and ceramic filler. The manufacturing process of HDI substrates with embedded components was specified and verified. Impedance to frequency characteristic, capacity to temperature and capacityto voltage characteristic of embedded capacitors were measured in detail. Impedance to frequency characteristics were also measured for embedded inductors. Electrical parameters of embedded components were calculated as well.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ESTC2012
ISBN
978-1-4673-4644-3
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
1-6
Publisher name
IEEE
Place of publication
345 E 47TH ST, NEW YORK, NY 10017 USA
Event location
Amstrdam
Event date
Sep 17, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000324550400139