SiBCN materials for high-temperature applications: Atomistic origin of electrical conductivity

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F10%3A00503579" target="_blank" >RIV/49777513:23520/10:00503579 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

SiBCN materials for high-temperature applications: Atomistic origin of electrical conductivity

Original language description

The paper contains a detailed discussion of the electronic structure of the novel hard and thermally stable amorphous SiBCN materials. We focus on the weight of individual electronic states on different elements, bond types, bonds of different lengths, and the number of atoms and clusters of atoms the states are localized on. A special attention is paid to the states around the Fermi level. We show in detail the effect of individual elements and bond types on the (non)conductivity of the materials. Theresults provide a detailed insight into the complex relationships between the material composition and the electronic properties, and allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stabilitywith electrical conductivity.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

108

Issue of the periodical within the volume

8

Country of publishing house

US - UNITED STATES

Number of pages

7

Pages from-to

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UT code for WoS article

000283745100069

EID of the result in the Scopus database

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