Effect of nitrogen content on electronic structure and properties of SiBCN materials

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F11%3A43898420" target="_blank" >RIV/49777513:23520/11:43898420 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.actamat.2010.12.030" target="_blank" >http://dx.doi.org/10.1016/j.actamat.2010.12.030</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.actamat.2010.12.030" target="_blank" >10.1016/j.actamat.2010.12.030</a>

Result language
angličtina
Original language name
Effect of nitrogen content on electronic structure and properties of SiBCN materials
Original language description
Amorphous SiBCN materials were prepared using reactive magnetron sputtering, and their structure, electronic structure and electrical and optical properties were studied using a combined approach of experiment and ab initio calculations. We focus on theeffect of N content over a wide range on the material properties. We find that decreasing the N content (from 54 to 0 at.%) decreases the electrical resistivity (from }10^8 to 0.2 ohm meter) and the optical gap (from 3.5 eV to almost 0), and explain theeffect in terms of the band gap and the localization of electronic states. The results allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability and electrical conductivity.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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