Hard TiN2 dinitride films prepared by magnetron sputtering

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F18%3A43951667" target="_blank" >RIV/49777513:23520/18:43951667 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1116/1.5038555" target="_blank" >https://doi.org/10.1116/1.5038555</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1116/1.5038555" target="_blank" >10.1116/1.5038555</a>

Result language
angličtina
Original language name
Hard TiN2 dinitride films prepared by magnetron sputtering
Original language description
This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20506 - Coating and films

Project
<a href="/en/project/LO1506" target="_blank" >LO1506: Sustainability support of the centre NTIS - New Technologies for the Information Society</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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