Transparent and conductive ZnO:Al prepared by Rf diode sputtering

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F08%3A00500271" target="_blank" >RIV/49777513:23640/08:00500271 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Transparent and conductive ZnO:Al prepared by Rf diode sputtering

Original language description

High transparent and conductive ZnO:Al thin film were prepared by RF diode sputtering from ZnO + 2 wt. % Al2O3 target on Corning glass substrates. The RF power and the substrate temperature modified their structure and surface morfology, electrical and optical parameters. The XRD patterns reveal a preferential c-axis orientation. The developed ZnO:Ale have a low electrical resistivity and high optical transmittance in the visible region. The direct optical band gap increases with the increasing carrierconcentration.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Journal of Physics: Conference Series

ISBN

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ISSN

1742-6588

e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

IOP PUBLISHING LTD

Place of publication

BRISTOL

Event location

Stockholm, Sweden

Event date

Jun 6, 2007

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000275655200299