Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F09%3A00502623" target="_blank" >RIV/49777513:23640/09:00502623 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering

Original language description

Zinc oxide (ZnO) belongs to the wide energy band-gap II-VI binary semiconductors with many interesting physical properties. Non-stoichiometric ZnO is a native n-type semiconductor, and it is quite easy to increase its conductivity by its doping using appropriate element. Somewhat difficult is ZnO doping to p-type conductivity. The paper deals with the research of p-type conductivity of ZnO thin films doped by nitrogen and their physical properties. The films were prepared by RF diode sputter depositionfrom ceramic ZnO target with different argon/nitrogen working gas mixture.

Czech name

—

Czech description

—

Type

C - Chapter in a specialist book

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Book/collection name

Micro Electronic and Mechanical Systems

ISBN

978-953-307-027-8

Number of pages of the result

24

Pages from-to

—

Number of pages of the book

386

Publisher name

In-Teh

Place of publication

Vukovar

UT code for WoS chapter

—