Activities towards p-type doping of ZnO

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10080650" target="_blank" >RIV/00216208:11320/11:10080650 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/1742-6596/265/1/012002" target="_blank" >http://iopscience.iop.org/1742-6596/265/1/012002</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/265/1/012002" target="_blank" >10.1088/1742-6596/265/1/012002</a>

Result language
angličtina
Original language name
Activities towards p-type doping of ZnO
Original language description
Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostlyn-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized.
Czech name
—
Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/OC%20165" target="_blank" >OC 165: Structure simulation and positron response calculation for complex defects in materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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