Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F18%3A00484810" target="_blank" >RIV/67985882:_____/18:00484810 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssa.201700592" target="_blank" >http://dx.doi.org/10.1002/pssa.201700592</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssa.201700592" target="_blank" >10.1002/pssa.201700592</a>

Result language
angličtina
Original language name
Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods
Original language description
Rectifying ZnO homojunctions are fabricated by simple wet chemistry methods. The p-n junction is formed between a p-type nanostructured seed layer deposited by sol-gel method on phosphorus doped Si substrates and an array of n-type nanorods grown by chemical bath deposition. The p-type conductivity in the nanostructured layer is achieved by thermal diffusion of phosphorus from the Si substrate. The diffusion of phosphorus is supported by the observation of optical transitions related to neutral acceptor bound exciton in low-temperature photoluminescence spectra. The p-n junction shows a high value of rectification ratio. Charge transport through the p-n junction is discussed in terms of non-ideal interface
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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