Optical and structural characterization of inhomogeneities in a-Si:H to mc-Si transition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F10%3A43898566" target="_blank" >RIV/49777513:23640/10:43898566 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.vacuum.2010.01.021" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2010.01.021</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.vacuum.2010.01.021" target="_blank" >10.1016/j.vacuum.2010.01.021</a>

Result language
angličtina
Original language name
Optical and structural characterization of inhomogeneities in a-Si:H to mc-Si transition
Original language description
The a-Si:H ?lms with different thickness and microstructure have been deposited with rf-PECVD using a plasma of silane diluted with hydrogen. The structure and optical analysis were carried out by X-ray diffraction, UV/VIS and Raman spectroscopy. Spectral refractive indices, optical energy band gaps, extinction coef?cients, phases ratio and grain size were determined as a function of the hydrogen dilution (R = H2/SiH4). Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to micro-crystalline hydrogenated silicon (mc-Si:H). XRD analysis indicated that ?lms with R = 0 and R = 20 were amorphous and homogeneous, while ?lms with R = 40 and higher were micro-crystallineconsisting medium range ordered silicon hydride (Si4H) and mc-Si phases with different size of crystallites, which was con?rmed also by Raman spectroscopy.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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