Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Spectral Lines of XRD, FTIR and Raman Spectroscopies

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43917411" target="_blank" >RIV/49777513:23640/12:43917411 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Spectral Lines of XRD, FTIR and Raman Spectroscopies

Original language description

Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functionsarising from the instrumental factors and specimen imperfections. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen content and distribution) carried out from the analysis indicated good agreement between the results from UV/Vis spectrophotometry

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů