Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F19%3A43958865" target="_blank" >RIV/49777513:23640/19:43958865 - isvavai.cz</a>
Result on the web
<a href="https://iopscience.iop.org/article/10.1088/1361-648X/ab1529" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-648X/ab1529</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-648X/ab1529" target="_blank" >10.1088/1361-648X/ab1529</a>
Alternative languages
Result language
angličtina
Original language name
Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments
Original language description
The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Computational and Experimental Design of Advanced Materials with New Functionalities</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN
0953-8984
e-ISSN
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Volume of the periodical
31
Issue of the periodical within the volume
28
Country of publishing house
GB - UNITED KINGDOM
Number of pages
18
Pages from-to
"NESTRÁNKOVÁNO"
UT code for WoS article
000466268600001
EID of the result in the Scopus database
2-s2.0-85065807710