Lifetime estimation with thermal models of semiconductors.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F10%3A00424281" target="_blank" >RIV/60162694:G43__/10:00424281 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Lifetime estimation with thermal models of semiconductors.
Original language description
Lifetime of power electronics is seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. For evaluating the lifetime of power electronics, information is required on the thermal cycling of thepower electronics components. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. In this paper the combined modeling and simulation of electrical and thermal behavior of semiconductors is discussed. The models for thesemiconductors, being the MOSFET, IGBT and DIODE are briefly introduced and their most important parameters are highlighted. The thermal models for semiconductors are discussed and how they are connected to the semiconductors. A series of measurements are shown for the MOSFET, IGBT and DIODE and these results are compared with simulations.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
KA - Militarism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F09%2F0013" target="_blank" >GA102/09/0013: Bi-directional dc-dc Converters of Photovoltaic Systems with Maximum Power Tracker</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the IEEE Energy Conversion Congress & Expo (ECCE 2010)
ISBN
978-1-4244-5286-6
ISSN
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e-ISSN
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Number of pages
8
Pages from-to
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Publisher name
IEEE
Place of publication
Atlanta, USA
Event location
Atlanta, USA
Event date
Jan 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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