Techniques for reliable and accurate numerical solutions of memristor models

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F15%3A00531652" target="_blank" >RIV/60162694:G43__/15:00531652 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26220/15:PU116209

Result on the web

<a href="http://vavtest.unob.cz/registr" target="_blank" >http://vavtest.unob.cz/registr</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ECCTD.2015.7300123" target="_blank" >10.1109/ECCTD.2015.7300123</a>

Result language

angličtina

Original language name

Techniques for reliable and accurate numerical solutions of memristor models

Original language description

This work presents techniques for an accurate numerical simulation of memristor models. In physics-based models of extended memristors under indirect excitation, the solution of the state equations is constrained to lie on specific manifolds at all times. A possible algorithm for the determination of numerical solutions to the algebraic differential equation set typical of these systems consists of augmenting the state vector with a novel variable which is invariant on the manifold. Solving the resulting ordinary differential equation problem simplifies the simulation since the algebraic constraint is embedded into the state equations. Regarding mathematical descriptions of generic memristors, where the state may only lie within a closed set, a procedure identifying each undesired event where the state either exceeds the upper bound or goes below the lower one, stopping the current simulation, starting a new one with initial condition set to the violated limit, and finally concatenating the time series of the various simulation sections, ensures a well-behaved simulation run, and, consequently, a reliable numerical solution. Examples from a number of case studies demonstrate that the adoption of the proposed techniques prevents possible issues emerging in classical numerical integration methodologies, resulting in well-behaved state solutions, thus allowing a meaningful exploration of the full potential of memristors in electronic circuit design.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

2015 European Conference on Circuit Theory and Design (ECCTD)

ISBN

978-1-4799-9877-7

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

1-4

Publisher name

IEEE

Place of publication

Trondheim, Norway

Event location

Trondheim, Norway

Event date

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Type of event by nationality

CST - Celostátní akce

UT code for WoS article

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