A Complete Analytical Solution for the On and Off Dynamic Equations of a TaO Memristor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU134905" target="_blank" >RIV/00216305:26220/19:PU134905 - isvavai.cz</a>
Result on the web
<a href="https://dx.doi.org/10.1109/TCSII.2018.2869920" target="_blank" >https://dx.doi.org/10.1109/TCSII.2018.2869920</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TCSII.2018.2869920" target="_blank" >10.1109/TCSII.2018.2869920</a>
Alternative languages
Result language
angličtina
Original language name
A Complete Analytical Solution for the On and Off Dynamic Equations of a TaO Memristor
Original language description
In this brief we provide a complete analytical model for the time evolution of the state of a real-world memristor under any dc stimulus and for all initial conditions. The analytical dc model is derived through the application of mathematical techniques to Strachan's accurate mathematical description of a tantalum oxide nano-device from Hewlett Packard Labs. Under positive dc inputs the state equation of the Strachan model can be solved analytically, providing a closed-form expression for the device memory state response. However, to the best of our knowledge, the analytical integration of the state equation of the Strachan model under dc inputs of negative polarity is an unsolved mathematical problem. In order to bypass this issue, the state evolution function is first expanded in a series of Lagrange polynomials, which reproduces accurately the original model predictions on the device off-switching kinetics. The solution to the resulting state equation approximation may then be computed analytically by applying methods from the field of mathematics. Our full analytical model matches both qualitatively and quantitatively the tantalum oxide memristor response captured by the original differential algebraic equation set to typical stimuli of interest such as symmetric and asymmetric pulse excitations. It is further insensitive to the convergence issues that typically arise in the numerical integration of the original model, and may be easily integrated into software programs for circuit synthesis, providing designers with a reliable tool for exploratory studies on the capability of a certain circuit topology to satisfy given design specifications.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GA18-21608S" target="_blank" >GA18-21608S: Memristors and other unconventional circuit elements</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
ISSN
1549-7747
e-ISSN
1558-3791
Volume of the periodical
66
Issue of the periodical within the volume
4
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
682-686
UT code for WoS article
000463067000034
EID of the result in the Scopus database
2-s2.0-85053337914