Investigation of band gap of Dy doped Gallium Nitride layers using the transmittance measurement
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F08%3A00020118" target="_blank" >RIV/60461373:22310/08:00020118 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Investigation of band gap of Dy doped Gallium Nitride layers using the transmittance measurement
Original language description
Investigation of band gap of Dy doped Gallium Nitride layers using the transmittance measurement
Czech name
Výzkum šířky zakázaného pásu GaN vrstev dotovaných Dy
Czech description
Výzkum šířky zakázaného pásu GaN vrstev dotovaných Dy
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F06%2F0424" target="_blank" >GA102/06/0424: New components of the integrated optics made by the planar hybrid technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings Electronic Devices and Systems IMAPS CS International Conference 2008
ISBN
978-80-214-3717-3
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
VUT Brno
Place of publication
Brno
Event location
Brno
Event date
Sep 10, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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