Growth and properties of GaN:Mn layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F08%3A00020130" target="_blank" >RIV/60461373:22310/08:00020130 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Growth and properties of GaN:Mn layers
Original language description
In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. The analysis of the MOVPE deposition process of Ga1-xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 °C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase.
Czech name
Růst a vlastnosti vrstev GaN:Mn
Czech description
Růst a vlastnosti vrstev GaN:Mn
Classification
Type
D - Article in proceedings
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA104%2F06%2F0642" target="_blank" >GA104/06/0642: Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Vrstvy a povlaky 2008
ISBN
978-80-969310-7-1
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
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Publisher name
Digital Graphic
Place of publication
Trenčín
Event location
Rožnov pod Radhoštěm
Event date
Sep 29, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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