Mn doping of GaN layers grown by MOVPE

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00385913" target="_blank" >RIV/68378271:_____/12:00385913 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22310/12:43893551

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Mn doping of GaN layers grown by MOVPE

Original language description

In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)(2)Mn was used as a Mn-precursor The flow of the Mn precursor was 0.2-3.2 mu mol.min(-1). The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar the temperature 1050 degrees C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer's properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Ceramics - Silikáty

ISSN

0862-5468

e-ISSN

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Volume of the periodical

56

Issue of the periodical within the volume

2

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

5

Pages from-to

122-126

UT code for WoS article

000307678000006

EID of the result in the Scopus database

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