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Femtosecond and highly sensitive GaAs metal?semiconductor?metal photodetectors grown on aluminum mirrors/pseudo-substrates

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F10%3A00022997" target="_blank" >RIV/60461373:22310/10:00022997 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Femtosecond and highly sensitive GaAs metal?semiconductor?metal photodetectors grown on aluminum mirrors/pseudo-substrates

  • Original language description

    Ultrafast metal-semiconductor-metal photodetectors on GaAs grown on aluminum mirrors/pseudo-substrates were fabricated and tested. Surface characterization measurements reveal the good quality of the surface morphology, while X-ray diffraction measurements show several crystallographic orientations of the GaAs layer. The material exhibits a 50 fs carrier lifetime due to growth-induced defects. The response of the photodetectors shows a full width at half maximum of 300 fs. These results demonstrate thatthe growth of GaAs layers on lattice-mismatched metallic substrates with a high thermal conductivity is a promising approach for low-cost and large-area fabrication of electronic and ultrafast photonic devices that require a highly effective thermal drain.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA104%2F09%2F0621" target="_blank" >GA104/09/0621: ZnO-based magnetic semiconductors</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Semiconductor Science and Technology

  • ISSN

    0268-1242

  • e-ISSN

  • Volume of the periodical

    25

  • Issue of the periodical within the volume

    7

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    4

  • Pages from-to

  • UT code for WoS article

    000279319600001

  • EID of the result in the Scopus database