Role of reactive metals in Ge/Pd/GaAs contact structures.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F03%3A49033144" target="_blank" >RIV/61389005:_____/03:49033144 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/03:00101833
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Role of reactive metals in Ge/Pd/GaAs contact structures.
Original language description
This article describes the behavior of the contact structures of the Ge/Pd type with addition of a very thin layer of a reactive metal (Ti, Ni, Cr) deposited on the surface of the GaAs plate prior to the metallization. The most suitable structure by thecontact resistivity and thermal stability is Ge(40)/Pd(4)/Ti(0.5). This structure showed minimal contact resistivity 2.66 X 10(-6) Omegacm(2). During the reliability test carried out at 400 degreesC, the contact resistivity only doubled after 10 h. The RBS measurement results show little mixing between titanium and GaAs. Chromium and nickel reacted with GaAs substrate very strongly. As presumed, the deposited reactive metals reduce the natural oxides on the GaAs surface, the effect of titanium being themost significant.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BG - Nuclear, atomic and molecular physics, accelerators
OECD FORD branch
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Project
<a href="/en/project/KSK1010104" target="_blank" >KSK1010104: Condensed matter physics and materials science</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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