Raman study of Ni and Ni silicide contacts on 4H-and 6H-SiC

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43894328" target="_blank" >RIV/60461373:22310/12:43894328 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22810/12:43894328

Result on the web

<a href="http://dx.doi.org/10.1016/j.tsf.2012.02.008" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2012.02.008</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2012.02.008" target="_blank" >10.1016/j.tsf.2012.02.008</a>

Result language

angličtina

Original language name

Raman study of Ni and Ni silicide contacts on 4H-and 6H-SiC

Original language description

Ni2Si, NiSi and NiSi2 contacts were prepared on n-type 4H- and 6H-SiC(0001) by deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature annealing, as well as pure Ni contacts. After annealing, the individual contacts were analyzed by Raman spectroscopy and electrical property measurements. Contact structures were then etched-off and subsequently observed by means of AFM (Atomic Force Microscopy). Ni reacted with SiC, forming Ni2Si and carbon. At NixSiy/SiC contact structures the respective suicides were already formed at low annealing temperatures, when only Schottky behavior of the structures was observed. The intended silicides, once formed, did not change any further with increasing annealing temperature. All contact structures provided good ohmic behavior after being annealed at 960 degrees C. By means of combined AFM and Raman analysis of the etched-off contacts we found that the silicide contact structures very probably did not react with SiC whi

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JJ - Other materials

OECD FORD branch

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Project

<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

520

Issue of the periodical within the volume

13

Country of publishing house

GB - UNITED KINGDOM

Number of pages

11

Pages from-to

4378-4388

UT code for WoS article

000303084200026

EID of the result in the Scopus database

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