Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892465" target="_blank" >RIV/60461373:22310/11:43892465 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level

Original language description

Ni suicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structure were ohmic with low contact resistivity approximately 8 x 10(-4) Omega cm(2) after annealing at 960 degrees C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070 degrees C to see ohmic behavior appearing with resistivities reaching 8 x 10(-3) Omega cm(2) and this was valid only for Ni end Ni(2)Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is e

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Radioengineering

ISSN

1210-2512

e-ISSN

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Volume of the periodical

20

Issue of the periodical within the volume

1

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

5

Pages from-to

209-213

UT code for WoS article

000289657400006

EID of the result in the Scopus database

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