Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43880058" target="_blank" >RIV/60461373:22310/11:43880058 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.mee.2010.06.039" target="_blank" >http://dx.doi.org/10.1016/j.mee.2010.06.039</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mee.2010.06.039" target="_blank" >10.1016/j.mee.2010.06.039</a>
Alternative languages
Result language
angličtina
Original language name
Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation
Original language description
This work is dealing with the influence of surface treatment on ohmic contacts to hexagonal N-type SiC with medium doping level. The contact materials were Ni and Ni2Si. The structures had to be annealed at high temperatures in order to reach ohmic behavior. A number of surface treatment methods were tested: wet cleaning, plasma etching, intentional oxidation with etching, H2 annealing and their combinations. After some types of cleaning, the SiC surface was immediately analysed using the XPS method. The results of the analyses showed that the composition of the surface was not much influenced by these treatments. At lower annealing temperatures (approx. up to 850°C) the prepared contacts showed Schottky behavior with large scatter of parameters. Afterannealing at approx. 960 °C, where the onset of ohmic behavior is expected, the structures were truly ohmic and of good parameters. Cleaning methods had just a negligible influence on the electrical parameters of the ohmic contacts. An e
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Microelectronic Engineering
ISSN
0167-9317
e-ISSN
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Volume of the periodical
88
Issue of the periodical within the volume
5
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
553-556
UT code for WoS article
000289137600006
EID of the result in the Scopus database
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