Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43896497" target="_blank" >RIV/60461373:22310/13:43896497 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.797" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.797</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.797" target="_blank" >10.4028/www.scientific.net/MSF.740-742.797</a>

Result language
angličtina
Original language name
Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability
Original language description
A method for formation of enhanced ohmic contacts on SiC for operation under adverse conditions has been studied. Ni, NiSi2 and Si ohmic contacts were prepared and tested at 300 degrees C on air for hundreds of hours. NiSi2 and Si have showed high thermal stability. Moreover, also the so called secondary contacts have showed good electrical and structural properties in the test. The secondary ohmic contacts have been formed from the original ohmic contacts after they were etched off and replaced. Secondary ohmic contacts originate in a certain surface modification of the SiC substrate created during high temperature annealing of the original contact. All applied contact materials enable formation of quality secondary contacts which is especially noteworthy at NiSi2 and Si. The results bring new SiC device design perspectives with the application of the secondary ohmic contacts. For example, the contact is designed so that the primary contact attains as good ohmic behavior as possible w
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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