All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Si ohmic contacts on N-type SiC studied by XPS

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43895685" target="_blank" >RIV/60461373:22310/13:43895685 - isvavai.cz</a>

  • Alternative codes found

    RIV/60461373:22810/13:43895685

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.mee.2012.12.019" target="_blank" >http://dx.doi.org/10.1016/j.mee.2012.12.019</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.mee.2012.12.019" target="_blank" >10.1016/j.mee.2012.12.019</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Si ohmic contacts on N-type SiC studied by XPS

  • Original language description

    Si ohmic contacts on N-type 4H- and 6H-SiC with contact resistivity comparable with Ni metallizations were prepared. After etching-off of the Si contacts and deposition of new, unannealed ones, good electrical parameters of the original contacts remain preserved. Such unannealed secondary contacts were already successfully created with original Ni or Ni silicide metallizations. An advantage offered by the secondary contacts prepared after the original Si contacts is that they are prepared on a high-quality SiC surface as the original Si does not react with SiC. XPS and AFM analyses were carried out. Under the original Si contacts when they are etched-off there is observed a shift of Si and C peaks to higher binding energies in comparison with a clean,bare SiC surface. After less than 2 nm of the surface layer is sputtered-off the shift disappears. We suggest that preserved electrical parameters after the etching-off of the Si contacts stem from a SiC surface modification.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Microelectronic Engineering

  • ISSN

    0167-9317

  • e-ISSN

  • Volume of the periodical

    106

  • Issue of the periodical within the volume

    JUN 2013

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    7

  • Pages from-to

    132-138

  • UT code for WoS article

    000319545500026

  • EID of the result in the Scopus database