Si ohmic contacts on N-type SiC

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892657" target="_blank" >RIV/60461373:22310/11:43892657 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22810/11:43892657

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Si ohmic contacts on N-type SiC

Original language description

Widespread Ni/SiC contact after annealing at high temperatures provides good ohmic contact. We managed to prepare Si/SiC annealed ohmic contacts with comparable qualities as Ni/SiC ones. However, the main benefit of these Si/SiC ohmic contacts lies in that they retain their ohmic properties even after they are etched off which brings grounds for promising secondary contacts. Etched contacts were analyzed by XPS and surface composition alteration was observed.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

—

Project

<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

IEEE Catalog Number CFP11/TR-CDR

ISBN

978-1-4577-0501-4

ISSN

—

e-ISSN

—

Number of pages

3

Pages from-to

0502-"1/11"

Publisher name

IEEE Electron Devices Society

Place of publication

Washington

Event location

Dresden

Event date

May 9, 2011

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

—