Thermal degradation of Ni-based Schottky contacts on 6H-SiC

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892440" target="_blank" >RIV/60461373:22310/11:43892440 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22810/11:43892440
Result on the web
<a href="http://dx.doi.org/10.1016/j.apsusc.2010.12.077" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2010.12.077</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2010.12.077" target="_blank" >10.1016/j.apsusc.2010.12.077</a>

Result language
angličtina
Original language name
Thermal degradation of Ni-based Schottky contacts on 6H-SiC
Original language description
We prepared Ni and Ni(2)Si Schottky contacts on lightly doped (5.5 x 10(15) cm(-3)) n-type 6H-SiC and evaluated their thermal degradation after annealing in the temperature range of 750-1150 degrees C. Ni contacts had Schottky behavior after annealing at750 and 850 degrees C; they gradually degraded at 960 and 1065 degrees C, and achieved ohmic behavior at 1150 degrees C. Ni(2)Si contacts had higher values of saturation current density and lower Schottky barrier heights than Ni contacts after annealingat 750 and 850 degrees C, and an abrupt transition from Schottky behavior at 850 degrees C to ohmic behavior at 960 degrees C. We assume that the abrupt transition from Schottky to ohmic behavior in the case of Ni(2)Si metallization is caused by its lowreactivity with silicon carbide, which was verified by XPS depth profiling. The results indicate that the discrepancy in the behavior of Ni contacts on lightly doped SiC reported in the literature might have been caused by non-equal proc
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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