Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43897467" target="_blank" >RIV/60461373:22310/14:43897467 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/0268-1242/29/4/045022/pdf/0268-1242_29_4_045022.pdf" target="_blank" >http://iopscience.iop.org/0268-1242/29/4/045022/pdf/0268-1242_29_4_045022.pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0268-1242/29/4/045022" target="_blank" >10.1088/0268-1242/29/4/045022</a>
Alternative languages
Result language
angličtina
Original language name
Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures
Original language description
We report on the impact of thermal annealing to carrier transport and transient, subpicosecond photoresponse of freestanding GaAs mesostructures. Our measurements included micro-photoluminescence and dark current and responsivity studies as well as optical femtosecond characterization. The fabricated GaAs mesostructures consisted of both mesowires and platelets that were integrated into coplanar striplines to form a photoconductive switch. We demonstrate that an optimized annealing process of our mesostructures, performed at 600 degrees C for 20 min, led to restoring bulklike properties of our freestanding devices. They exhibited dark currents below 600 pA at 10 V bias, responsivity of 0.2 A W-1 at 30 V, and mobility as high as 7300 cm(2) V s(-1). Theannealed freestanding GaAs photodetectors were characterized by subpicosecond carrier relaxation dynamics with negligible trapping and a cutoff frequency of 1.3 THz. The latter characteristics make them excellent candidates for THz-bandwi
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductor Science and Technology
ISSN
0268-1242
e-ISSN
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Volume of the periodical
29
Issue of the periodical within the volume
4
Country of publishing house
GB - UNITED KINGDOM
Number of pages
7
Pages from-to
045022
UT code for WoS article
000333275600024
EID of the result in the Scopus database
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