Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F01%3A02010378" target="_blank" >RIV/68378271:_____/01:02010378 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy.
Original language description
Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175-250 C), the carrier mobility was also estimated.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LN00A032" target="_blank" >LN00A032: Structure and dynamics of complex molecular systems and biomolecules</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
90
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
1303-1306
UT code for WoS article
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EID of the result in the Scopus database
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