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Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy.

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F01%3A02010378" target="_blank" >RIV/68378271:_____/01:02010378 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy.

  • Original language description

    Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175-250 C), the carrier mobility was also estimated.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/LN00A032" target="_blank" >LN00A032: Structure and dynamics of complex molecular systems and biomolecules</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2001

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    90

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    4

  • Pages from-to

    1303-1306

  • UT code for WoS article

  • EID of the result in the Scopus database