Effect of Fe doping on the terahertz conductivity of GaN single crystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00354453" target="_blank" >RIV/68378271:_____/10:00354453 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Effect of Fe doping on the terahertz conductivity of GaN single crystals
Original language description
Bulk single crystals of GaN with different degrees of Fe doping were studied using time-domain terahertz spectroscopy at high temperatures. Features due to free carriers were observed in the complex permittivity spectra with a pronounced dependence on both doping and temperature. Fitting the spectra using the Drude model made it possible to deduce a defect ionization energy of 16 meV in the undoped sample while the spectra of doped samples are consistent with an ionization energy of 60 meV. Also, the free carrier concentrations at temperatures from 300 to 900 K were estimated.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Physics D-Applied Physics
ISSN
0022-3727
e-ISSN
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Volume of the periodical
43
Issue of the periodical within the volume
14
Country of publishing house
GB - UNITED KINGDOM
Number of pages
5
Pages from-to
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UT code for WoS article
000275891300014
EID of the result in the Scopus database
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