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Toxicity of layered semiconductor chalcogenides: beware of interferences

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43899690" target="_blank" >RIV/60461373:22310/15:43899690 - isvavai.cz</a>

  • Result on the web

    <a href="http://pubs.rsc.org/en/content/articlehtml/2015/ra/c5ra09404f" target="_blank" >http://pubs.rsc.org/en/content/articlehtml/2015/ra/c5ra09404f</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1039/c5ra09404f" target="_blank" >10.1039/c5ra09404f</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Toxicity of layered semiconductor chalcogenides: beware of interferences

  • Original language description

    The absence of bandgap in graphene has opened exploration in a new class of 2D nanomaterials: layered semiconductor chalcogenides. Research has found that they have promising properties which are advantageous for applications in a wide range of fields such as solar energy conversion, field effect transistors, optoelectronic devices, energy storage, and is expanding into biomedical applications. However, little is known about their toxicity effects. In view of the possibility of employing these materialsinto consumer products, we investigated the cytotoxicity of two common layered semiconductor chalcogenides, namely GaSe and GeS, based on cell viability assessments using water-soluble tetrazolium salt (WST-8) and methyl-thiazolyldiphenyl-tetrazolium bromide (MTT) assays after a 24 h exposure to varying concentrations of the nanomaterials on human lung carcinoma epithelial cells (A549). The cytotoxicity results indicated that GaSe is relatively more toxic than another group of 2D layere

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA15-07912S" target="_blank" >GA15-07912S: New 2D layered chalcogenides thin films and 3D nanostructures: Synthesis and characterization</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    RSC Advances

  • ISSN

    2046-2069

  • e-ISSN

  • Volume of the periodical

    5

  • Issue of the periodical within the volume

    83

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    8

  • Pages from-to

    67485-67492

  • UT code for WoS article

    000359537000015

  • EID of the result in the Scopus database