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Role of ion bombardment, film thickness and temperature of annealing on PEC activity of very-thin film hematite photoanodes deposited by advanced magnetron sputtering

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F16%3A43902470" target="_blank" >RIV/60461373:22310/16:43902470 - isvavai.cz</a>

  • Alternative codes found

    RIV/61989592:15310/16:33160273 RIV/60461373:22350/16:43902470

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >http://dx.doi.org/10.1016/j.ijhydene.2015.12.199</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >10.1016/j.ijhydene.2015.12.199</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Role of ion bombardment, film thickness and temperature of annealing on PEC activity of very-thin film hematite photoanodes deposited by advanced magnetron sputtering

  • Original language description

    A High Power Impulse Magnetron Sputtering (HiPIMS) system was used for deposition of hematite thin films. Ion flux density on substrate was studied for different pulse discharge current densities corresponding to different pulsing frequencies of cathode voltage. Total thermal power flux density on substrate was investigated for the same plasma conditions as ion flux density was measured. Our findings revealed the pulse ion flux density on substrate linearly increases with pulse discharge current density whilst the total thermal power density decreases on about 50% when discharge pulsing frequency falls from 50 kHz to 100 Hz. Our previous investigation proved that the change in the discharge pulsing frequency has significant influence on microstructure of deposited hematite thin film. Results of our study imply that magnitude of the ion flux density on substrate leads to highly textured hematite thin film oriented along the desired (110) plane. Nevertheless the ion flux density on substrate is not substantial contribution to the total energy balance on substrate. Other elementary processes taking place on substrate probably can play a significant role in hematite thin film formation. The highest photocurrents of 0.86 mA cm(-2) at 0.55 V and 0.99 mA cm(-2) at 0.7 V vs. Ag/AgCl was revealed for the HiPIMS deposited films having the thickness of 25 nm and after the thermal treatment at 750 degrees C for 30 min. The photocurrents of 0.7 mA cm(-2) at 0.55 V and 0.82 mA cm(-2) at 0.7 V vs. Ag/AgCl of hematite films annealed at 650 degrees C for 30 min were reached when the voltage bias was applied to the FTO substrate during the deposition.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CG - Electrochemistry

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    International Journal of Hydrogen Energy

  • ISSN

    0360-3199

  • e-ISSN

  • Volume of the periodical

    41

  • Issue of the periodical within the volume

    27

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    11

  • Pages from-to

    11547-11557

  • UT code for WoS article

    000380627500007

  • EID of the result in the Scopus database