Role of ion bombardment, film thickness and temperature of annealing on PEC activity of very-thin film hematite photoanodes deposited by advanced magnetron sputtering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F16%3A43902470" target="_blank" >RIV/60461373:22310/16:43902470 - isvavai.cz</a>
Alternative codes found
RIV/61989592:15310/16:33160273 RIV/60461373:22350/16:43902470
Result on the web
<a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >http://dx.doi.org/10.1016/j.ijhydene.2015.12.199</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >10.1016/j.ijhydene.2015.12.199</a>
Alternative languages
Result language
angličtina
Original language name
Role of ion bombardment, film thickness and temperature of annealing on PEC activity of very-thin film hematite photoanodes deposited by advanced magnetron sputtering
Original language description
A High Power Impulse Magnetron Sputtering (HiPIMS) system was used for deposition of hematite thin films. Ion flux density on substrate was studied for different pulse discharge current densities corresponding to different pulsing frequencies of cathode voltage. Total thermal power flux density on substrate was investigated for the same plasma conditions as ion flux density was measured. Our findings revealed the pulse ion flux density on substrate linearly increases with pulse discharge current density whilst the total thermal power density decreases on about 50% when discharge pulsing frequency falls from 50 kHz to 100 Hz. Our previous investigation proved that the change in the discharge pulsing frequency has significant influence on microstructure of deposited hematite thin film. Results of our study imply that magnitude of the ion flux density on substrate leads to highly textured hematite thin film oriented along the desired (110) plane. Nevertheless the ion flux density on substrate is not substantial contribution to the total energy balance on substrate. Other elementary processes taking place on substrate probably can play a significant role in hematite thin film formation. The highest photocurrents of 0.86 mA cm(-2) at 0.55 V and 0.99 mA cm(-2) at 0.7 V vs. Ag/AgCl was revealed for the HiPIMS deposited films having the thickness of 25 nm and after the thermal treatment at 750 degrees C for 30 min. The photocurrents of 0.7 mA cm(-2) at 0.55 V and 0.82 mA cm(-2) at 0.7 V vs. Ag/AgCl of hematite films annealed at 650 degrees C for 30 min were reached when the voltage bias was applied to the FTO substrate during the deposition.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CG - Electrochemistry
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
International Journal of Hydrogen Energy
ISSN
0360-3199
e-ISSN
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Volume of the periodical
41
Issue of the periodical within the volume
27
Country of publishing house
GB - UNITED KINGDOM
Number of pages
11
Pages from-to
11547-11557
UT code for WoS article
000380627500007
EID of the result in the Scopus database
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