Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F16%3A00472490" target="_blank" >RIV/67985858:_____/16:00472490 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >http://dx.doi.org/10.1016/j.ijhydene.2015.12.199</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >10.1016/j.ijhydene.2015.12.199</a>

Result language

angličtina

Original language name

Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

Original language description

A High Power Impulse Magnetron Sputtering (HiPIMS) system was used for deposition of hematite thin films. Ion flux density on substrate was studied for different pulse discharge current densities corresponding to different pulsing frequencies of cathode voltage. Total thermal power flux density on substrate was investigated for the same plasma conditions as ion flux density was measured. Our findings revealed the pulse ion flux density on substrate linearly increases with pulse discharge current density whilst the total thermal power density decreases on about 50% when discharge pulsing frequency falls from 50 kHz to 100 Hz. Our previous investigation proved that the change in the discharge pulsing frequency has significant influence on microstructure of deposited hematite thin film. Results of our study imply that magnitude of the ion flux density on substrate leads to highly textured hematite thin film oriented along the desired (110) plane. Nevertheless the ion flux density on substrate is not substantial contribution to the total energy balance on substrate. Other elementary processes taking place on substrate probably can play a significant role in hematite thin film formation. The highest photocurrents of 0.86 mA cm(-2) at 0.55 V and 0.99 mA cm(-2) at 0.7 V vs. Ag/AgCl was revealed for the HiPIMS deposited films having the thickness of 25 nm and after the thermal treatment at 750 degrees C for 30 min. The photocurrents of 0.7 mA cm(-2) at 0.55 V and 0.82 mA cm(-2) at 0.7 V vs. Ag/AgCl of hematite films annealed at 650 degrees C for 30 min were reached when the voltage bias was applied to the FTO substrate during the deposition.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CF - Physical chemistry and theoretical chemistry

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

International Journal of Hydrogen Energy

ISSN

0360-3199

e-ISSN

—

Volume of the periodical

41

Issue of the periodical within the volume

27

Country of publishing house

US - UNITED STATES

Number of pages

11

Pages from-to

11547-11557

UT code for WoS article

000380627500007

EID of the result in the Scopus database

2-s2.0-84960839636