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Electrochemistry of Layered Semiconducting A(III)B(VI) Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe)

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F19%3A43918118" target="_blank" >RIV/60461373:22310/19:43918118 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216305:26620/19:PU133201

  • Result on the web

    <a href="https://onlinelibrary.wiley.com/doi/full/10.1002/cctc.201900449" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/cctc.201900449</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/cctc.201900449" target="_blank" >10.1002/cctc.201900449</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Electrochemistry of Layered Semiconducting A(III)B(VI) Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe)

  • Original language description

    Layered A(III)B(VI) chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered A(III)B(VI) chalcogenides like InSe and GaSe are composed of X-M-M-X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at -1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)(6)](3-/4-) redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s(-1). It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest kobs0 obtained (3.7x10(-3) cm s(-1)). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of -10 mA cm(-2). However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered A(III)B(VI) indium monochalcogenides which would influence potential applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10402 - Inorganic and nuclear chemistry

Result continuities

  • Project

    <a href="/en/project/GX19-26896X" target="_blank" >GX19-26896X: 2D Nanomaterials Electrochemistry</a><br>

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ChemCatChem

  • ISSN

    1867-3880

  • e-ISSN

  • Volume of the periodical

    11

  • Issue of the periodical within the volume

    11

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    9

  • Pages from-to

    2634-2642

  • UT code for WoS article

    000470937300009

  • EID of the result in the Scopus database

    2-s2.0-85065291103