Electrochemistry of Layered Semiconducting A(III)B(VI) Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F19%3A43918118" target="_blank" >RIV/60461373:22310/19:43918118 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26620/19:PU133201
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/cctc.201900449" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/cctc.201900449</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/cctc.201900449" target="_blank" >10.1002/cctc.201900449</a>
Alternative languages
Result language
angličtina
Original language name
Electrochemistry of Layered Semiconducting A(III)B(VI) Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe)
Original language description
Layered A(III)B(VI) chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered A(III)B(VI) chalcogenides like InSe and GaSe are composed of X-M-M-X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at -1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)(6)](3-/4-) redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s(-1). It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest kobs0 obtained (3.7x10(-3) cm s(-1)). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of -10 mA cm(-2). However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered A(III)B(VI) indium monochalcogenides which would influence potential applications.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/GX19-26896X" target="_blank" >GX19-26896X: 2D Nanomaterials Electrochemistry</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ChemCatChem
ISSN
1867-3880
e-ISSN
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Volume of the periodical
11
Issue of the periodical within the volume
11
Country of publishing house
DE - GERMANY
Number of pages
9
Pages from-to
2634-2642
UT code for WoS article
000470937300009
EID of the result in the Scopus database
2-s2.0-85065291103