Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F24%3A43931483" target="_blank" >RIV/60461373:22310/24:43931483 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/full/10.1021/acsnano.4c09745" target="_blank" >https://pubs.acs.org/doi/full/10.1021/acsnano.4c09745</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsnano.4c09745" target="_blank" >10.1021/acsnano.4c09745</a>
Alternative languages
Result language
angličtina
Original language name
Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces
Original language description
Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximizing their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (mu(Net)) as close as possible to that of individual nanosheets (mu(NS)). In practice, the presence of internanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance (R-J) to nanosheet resistance (R-NS), determines the network mobility via mu(NS)/mu(Net) approximate to R-J/R-NS + 1. Hence, achieving R-J/R-NS < 1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilize an advanced liquid-interface deposition process to maximize nanosheet alignment and network uniformity, thus reducing R-J. We demonstrate the approach using graphene and MoS2 as model materials, achieving low RJ/RNS values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of sigma(Net) = 5 x 10(4) S/m while our semiconducting MoS2 networks demonstrate record mobility of mu(Net) = 30 cm(2)/(V s), both at extremely low network thickness (t(Net) < 10 nm). Finally, we show that the deposition process is compatible with nonlayered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks <100 nm-thick.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Nano
ISSN
1936-0851
e-ISSN
1936-086X
Volume of the periodical
18
Issue of the periodical within the volume
47
Country of publishing house
US - UNITED STATES
Number of pages
13
Pages from-to
32589-32601
UT code for WoS article
001376459300001
EID of the result in the Scopus database
2-s2.0-85211392958