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All inkjet-printed electronics based on electrochemically exfoliated two-dimensional metal, semiconductor, and dielectric

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924190" target="_blank" >RIV/60461373:22310/22:43924190 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.nature.com/articles/s41699-022-00337-1" target="_blank" >https://www.nature.com/articles/s41699-022-00337-1</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1038/s41699-022-00337-1" target="_blank" >10.1038/s41699-022-00337-1</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    All inkjet-printed electronics based on electrochemically exfoliated two-dimensional metal, semiconductor, and dielectric

  • Original language description

    Inkjet printing is a cost-effective and scalable way to assemble colloidal materials into desired patterns in a vacuum- and lithography-free manner. Two-dimensional (2D) nanosheets are a promising material category for printed electronics because of their compatibility with solution processing for stable ink formulations as well as a wide range of electronic types from metal, semiconductor to insulator. Furthermore, their dangling bond-free surface enables atomically thin, electronically-active thin films with van der Waals contacts which significantly reduce the junction resistance. Here, we demonstrate all inkjet-printed thin-film transistors consisting of electrochemically exfoliated graphene, MoS2, and HfO2 as metallic electrodes, a semiconducting channel, and a high-k dielectric layer, respectively. In particular, the HfO2 dielectric layer is prepared via two-step; electrochemical exfoliation of semiconducting HfS2 followed by a thermal oxidation process to overcome the incompatibility of electrochemical exfoliation with insulating crystals. Consequently, all inkjet-printed 2D nanosheets with various electronic types enable high-performance, thin-film transistors which demonstrate field-effect mobilities and current on/off ratios of similar to 10 cm(2) V-1 s(-1) and &gt; 10(5), respectively, at low operating voltage.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Result continuities

  • Project

    <a href="/en/project/LTAUSA19034" target="_blank" >LTAUSA19034: Two-Dimensional Nanomaterials for Application in Electronic</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    NPJ 2D MATERIALS AND APPLICATIONS

  • ISSN

    2397-7132

  • e-ISSN

    2397-7132

  • Volume of the periodical

    6

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    12

  • Pages from-to

    nestrankovano

  • UT code for WoS article

    000852419000003

  • EID of the result in the Scopus database

    2-s2.0-85138130546