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Orthogonal photopatterning of two-dimensional percolated network films for wafer-scale heterostructures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932197" target="_blank" >RIV/60461373:22310/25:43932197 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.nature.com/articles/s41928-025-01351-z" target="_blank" >https://www.nature.com/articles/s41928-025-01351-z</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1038/s41928-025-01351-z" target="_blank" >10.1038/s41928-025-01351-z</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Orthogonal photopatterning of two-dimensional percolated network films for wafer-scale heterostructures

  • Original language description

    Molecular intercalation-based electrochemical exfoliation of two-dimensional (2D) materials can be used to create van der Waals heterostructures. However, the scalable assembly of vertical heterostructures typically requires the use of various chemical solvents for photolithography and subsequent transfer, which can leave behind chemical residues and limit the patterning resolution. We show that patterned van der Waals heterostructures can be fabricated from electrochemically exfoliated 2D flakes using a photoreactive crosslinker. When a 2D van der Waals percolated network with the crosslinker is exposed to ultraviolet light, the network junctions form covalent bonds, thereby enabling improved charge transport and orthogonal patterning of vertically stacked van der Waals thin-film networks without affecting the underlying prepatterned layers. Our approach can be used to create wafer-scale arrays of photopatterned field-effect transistors based on different 2D materials. The field-effect transistors exhibit high spatial uniformity and can be used to create logic gates, namely NOT, NAND and NOR gates.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20200 - Electrical engineering, Electronic engineering, Information engineering

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Nature Electronics

  • ISSN

    2520-1131

  • e-ISSN

    2520-1131

  • Volume of the periodical

    8

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

    235-243

  • UT code for WoS article

    001428996200001

  • EID of the result in the Scopus database

    2-s2.0-85218676708