Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F25%3A43932225" target="_blank" >RIV/60461373:22310/25:43932225 - isvavai.cz</a>
Result on the web
<a href="https://www.nature.com/articles/s41928-025-01379-1" target="_blank" >https://www.nature.com/articles/s41928-025-01379-1</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/s41928-025-01379-1" target="_blank" >10.1038/s41928-025-01379-1</a>
Alternative languages
Result language
angličtina
Original language name
Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics
Original language description
Reconfigurable devices that can switch functionalities could be used to overcome the limitations of miniaturized metal-oxide-semiconductor field-effect transistors. Conventional approaches typically involve the partial electrostatic modulation of two-dimensional semiconductors and use partial floating gates or dual-gate structures. Reconfigurable devices based on vertical van der Waals heterostructures have much simpler device structures, but lack a scalable assembly method. Here, we report a scalable reconfigurable device based on solution-processed van der Waals heterostructures. We vertically assemble thin films of sub-stoichiometric zirconium oxide (ZrO2-x) as a dielectric and molybdenum disulfide (MoS2) as a semiconductor layer. The ZrO2-x/MoS2 heterostructure provides simultaneous global and local gating within a single-gate transistor configuration, modulating the spatial electric field across the device in a reconfigurable manner. Under global gating conditions, the devices function as uniform field-effect transistors with an average field-effect mobility of 10 cm2 V-1 s-1 and current on/off ratio of up to 106. Under local gating conditions, the devices function as diodes, exhibiting a current rectification ratio of around 7 x 104. By harnessing the reconfigurable characteristics, we achieve adjustable temporal photoresponse dynamics with a photoresponsivity of around 105 A W-1, high spatial uniformity and multi-spectral photodetection. We also use the approach to create a large-area reconfigurable optoelectronics array.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20200 - Electrical engineering, Electronic engineering, Information engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nature Electronics
ISSN
2520-1131
e-ISSN
2520-1131
Volume of the periodical
8
Issue of the periodical within the volume
6
Country of publishing house
US - UNITED STATES
Number of pages
13
Pages from-to
461-473
UT code for WoS article
001482002800001
EID of the result in the Scopus database
2-s2.0-105004359772