The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22340%2F16%3A43902271" target="_blank" >RIV/60461373:22340/16:43902271 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/16:00461487 RIV/67985882:_____/16:00461487 RIV/00216208:11320/16:10335679
Result on the web
<a href="http://link.springer.com/article/10.1007/s00339-016-9759-6" target="_blank" >http://link.springer.com/article/10.1007/s00339-016-9759-6</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s00339-016-9759-6" target="_blank" >10.1007/s00339-016-9759-6</a>
Alternative languages
Result language
angličtina
Original language name
The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation
Original language description
Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD) and organic molecular evaporation (OME). ZnO: Sm thin film was grown by PLD (Nd: YAG, lambda = 266 nm, tau = 6 ns) from Sm2O3:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO: Sm layer by OME. ZnO: Sm films of c-axis-oriented hexagonal wurtzite structure and alpha-form ZnPc were obtained. Emission of intra-4f transition in Sm3+ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO: Sm/ZnPc were observed. Electrical properties were not affected by Sm3+ dopant as ZnO: Sm film exhibited high electrical resistivity similar to 5 x 10(4) Omega cm.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics A-Materials Science & Processing
ISSN
0947-8396
e-ISSN
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Volume of the periodical
122
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
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UT code for WoS article
000371041700084
EID of the result in the Scopus database
2-s2.0-84959308205