Pulsed laser deposition of Ga doped ZnO ﬁlms - Inﬂuence of deposition temperature and laser pulse frequency on structural, optical and electrical properties

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F19%3A43954229" target="_blank" >RIV/49777513:23640/19:43954229 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11025/31208" target="_blank" >http://hdl.handle.net/11025/31208</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.vacuum.2018.10.031" target="_blank" >10.1016/j.vacuum.2018.10.031</a>

Result language
angličtina
Original language name
Pulsed laser deposition of Ga doped ZnO ﬁlms - Inﬂuence of deposition temperature and laser pulse frequency on structural, optical and electrical properties
Original language description
The contribution deals with Ga doped ZnO films (deposited from a sintered target composed of 99.0 ZnO and 1.0wt % of Ga2O3) prepared by pulsed laser deposition (PLD). Experimentally were compared the deposition parameters influence on structural, optical and electrical properties. The variable parameters were: deposition temperature (RT to 500°C) and growth rate (controlled by laser pulsing repetition frequency in range 2–50Hz). Investigation by SEM and XRD confirmed columnar structure of prepared films with highly uniform crystallographic orientation regardless of applied deposition parameters. Samples exhibited high optical transparency in VIS region with sharp absorption edge near380nmand bandgap energies varied between3.19and 3.24eVat room temperature. The best electrical properties (resistivity ∼5.96×10−4Ωcm) was achieved at 400°C and 10Hz of laser frequency, however the application of deposition at RT or highest laser frequency (50Hz) still maintain average resistivity at levels of 10−3Ωcm. The results suggest that PLD can play an important role in production of high conductive transparent thin film deposited on temperature sensitive organic materials at RT deposition levels.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Project
<a href="/en/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Computational and Experimental Design of Advanced Materials with New Functionalities</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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