n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F16%3A00459721" target="_blank" >RIV/61388955:_____/16:00459721 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/16:00459721 RIV/68407700:21460/16:00306421
Result on the web
<a href="http://dx.doi.org/10.1039/c6ra05217g" target="_blank" >http://dx.doi.org/10.1039/c6ra05217g</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/c6ra05217g" target="_blank" >10.1039/c6ra05217g</a>
Alternative languages
Result language
angličtina
Original language name
n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study
Original language description
Electrochemical and in situ Raman spectroelectrochemical characterization of n-type phosphorus-doped nanocrystalline diamond (P-NCD) is carried out. The P-NCD films are grown by microwave plasma enhanced chemical vapour deposition and doped with phosphorus at a concentration of 10 000 ppm in the gas phase. Micro-Raman spectroscopy determines the film quality (presence of graphitic or amorphous phases). All electrochemical measurements are performed in aqueous 0.5 M H2SO4 electrolyte solution. Electrochemical impedance spectroscopy (EIS) confirms the n-type conduction of a P-NCD electrode and from the Mott–Schottky plot the donor concentration (ND) of 1.8 1018 cm3 is determined. The in situ Raman spectroelectrochemistry is performed in the potential range from 1.5 to 1.5 V vs. Ag/AgCl using two laser excitations (633 nm and 488 nm). In the case of the as-prepared P-NCD film, the Raman modes belonging to non-diamond (sp2) impurities change their intensities during applied potentials. The intensity of such Raman peaks increases at cathodic potentials, while at anodic potentials they disappear. On the other hand, the intensity and position of the sp3 diamond peak (1334 cm1) exhibit no spectroelectrochemical changes and the same holds for the photoluminescence peak (at 1.68 eV) assigned to Si-impurities. After several cyclic voltammetry (CV) scans, the electrochemical potential window of a P-NCD electrode increases. This is due to the “electrochemical burning of impurities at large anodic potentials, which is also confirmed by in situ Raman spectroelectrochemistry. Angle-resolved XPS confirms partial electrochemical oxidation of P-NCD in thin surface layers.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CG - Electrochemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA13-31783S" target="_blank" >GA13-31783S: Study of interfacial charge transfer process on boron and phosphorus doped diamond in contact with electrolyte solution</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
RSC Advances
ISSN
2046-2069
e-ISSN
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Volume of the periodical
6
Issue of the periodical within the volume
56
Country of publishing house
GB - UNITED KINGDOM
Number of pages
7
Pages from-to
51387-51393
UT code for WoS article
000377515200114
EID of the result in the Scopus database
2-s2.0-84971368293