Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F16%3A00459785" target="_blank" >RIV/61388955:_____/16:00459785 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/16:00459785
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules
Original language description
Graphene has high potential in chemical sensing, thus understanding adsorption and charge transfer between graphene and adsorbed molecules is essential. We show that graphene field-effect transistor exhibits a moderate sensoric response towards oxygen at temperature of 150 °C. Field-effect transistors serve as a tool to probe electronic properties of graphene. We demonstrate that adsorption of oxygen molecules onto graphene leads to an upshift of Dirac point and light changes in mobility of charge carriers.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
CG - Electrochemistry
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
XXXVI. Moderní elektrochemické metody. Sborník přednášek
ISBN
978-80-905221-4-5
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
18-22
Publisher name
Best servis
Place of publication
Ústí nad Labem
Event location
Jetřichovice
Event date
May 23, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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