Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F16%3A00462410" target="_blank" >RIV/61388955:_____/16:00462410 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/2053-1583/3/2/025022" target="_blank" >http://dx.doi.org/10.1088/2053-1583/3/2/025022</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/2053-1583/3/2/025022" target="_blank" >10.1088/2053-1583/3/2/025022</a>

Result language
angličtina
Original language name
Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene
Original language description
In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D') are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D' Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Project
<a href="/en/project/LL1301" target="_blank" >LL1301: From Graphene Hybrid Nanostructures to Green Electronics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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