Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F16%3A00462412" target="_blank" >RIV/61388955:_____/16:00462412 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1039/C6RA10764H" target="_blank" >http://dx.doi.org/10.1039/C6RA10764H</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/C6RA10764H" target="_blank" >10.1039/C6RA10764H</a>

Result language

angličtina

Original language name

Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

Original language description

Various doping levels of graphene on SiO2/Si substrates are reported in the literature. We show by in situ Raman spectroscopy that the heating of chemical vapor deposited graphene on SiO2/Si during the transfer process is the main factor causing this unintended doping of graphene samples. Large areas of graphene were analyzed using Raman spectroscopy, before and after the thermal treatment, to demonstrate that the effects of heating are spread throughout the graphene layer. The perturbations caused by the exposure of supported graphene during the first heating cycle (in vacuum) are irreversible, even though the samples were later in contact with the atmosphere. These results clarify deviations found in the Raman data obtained for transferred chemical vapor deposited graphene by different authors.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CF - Physical chemistry and theoretical chemistry

OECD FORD branch

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Project

<a href="/en/project/LL1301" target="_blank" >LL1301: From Graphene Hybrid Nanostructures to Green Electronics</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

RSC Advances

ISSN

2046-2069

e-ISSN

—

Volume of the periodical

6

Issue of the periodical within the volume

JUL 2016

Country of publishing house

GB - UNITED KINGDOM

Number of pages

8

Pages from-to

72859-72864

UT code for WoS article

000381513300125

EID of the result in the Scopus database

2-s2.0-84982684416