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Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F17%3A00474904" target="_blank" >RIV/61388955:_____/17:00474904 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/17:00474904 RIV/68407700:21230/17:00313322

  • Result on the web

    <a href="http://dx.doi.org/10.1021/acsnano.6b08412" target="_blank" >http://dx.doi.org/10.1021/acsnano.6b08412</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acsnano.6b08412" target="_blank" >10.1021/acsnano.6b08412</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs

  • Original language description

    Silicon vacancy (SiV) centers are optically active defects in diamond. The SiV centers, in contrast to nitrogen vacancy (NV) centers, possess narrow and efficient luminescence spectrum (centered at approximate to 738 nm) even at room temperature, which can be utilized for quantum photonics and sensing applications. However, most of light generated in diamond is trapped in the material due to the phenomenon of total internal reflection. In order to overcome this issue, we have prepared two-dimensional photonic crystal slabs from polycrystalline diamond thin layers with high density of SiV centers employing bottom up growth on quartz templates. We have shown that the spectral overlap between the narrow light emission of the SiV centers and the leaky modes extracting the emission into almost vertical direction (where it can be easily detected) can be obtained by controlling the deposition time. More than 14-fold extraction enhancement of the SiV centers photoluminescence was achieved compared to an uncorrugated sample.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10403 - Physical chemistry

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ACS Nano

  • ISSN

    1936-0851

  • e-ISSN

  • Volume of the periodical

    11

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    10

  • Pages from-to

    2972-2981

  • UT code for WoS article

    000398014900063

  • EID of the result in the Scopus database

    2-s2.0-85016420852