Temperature dependence of silicon vacancy centers photoluminescence in polycrystalline diamond
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F23%3A00370198" target="_blank" >RIV/68407700:21340/23:00370198 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Temperature dependence of silicon vacancy centers photoluminescence in polycrystalline diamond
Original language description
The silicon vacancy (SiV) color center in diamond is an optically active crystallographic point defect. Narrow band light emission of SiV centers makes them desirable in various fields such as quantum optics. In this work, we study SiV centers in polycrystalline diamond by using time-resolved low temperature photoluminescence (PL) spectroscopy. We investigate the spectral position, width, and decay dynamics of the SiV zero phonon line in the temperature range 12-300 K.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Sborník příspěvků 12. studentské vědecké konference fyziky pevných látek a materiálů, Nové Hrady 2023
ISBN
978-80-01-07255-4
ISSN
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e-ISSN
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Number of pages
8
Pages from-to
73-80
Publisher name
Fakulta jaderná a fyzikálně inženýrská
Place of publication
Praha
Event location
Nové Hrady
Event date
Sep 4, 2023
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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