Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00569728" target="_blank" >RIV/68378271:_____/23:00569728 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/23:10473206
Result on the web
<a href="https://doi.org/10.1039/d2nr05470a" target="_blank" >https://doi.org/10.1039/d2nr05470a</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d2nr05470a" target="_blank" >10.1039/d2nr05470a</a>
Alternative languages
Result language
angličtina
Original language name
Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film
Original language description
Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films.
Czech name
—
Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA19-14523S" target="_blank" >GA19-14523S: Stimulated emission and competitive processes in diamond optical centers</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nanoscale
ISSN
2040-3364
e-ISSN
2040-3372
Volume of the periodical
15
Issue of the periodical within the volume
6
Country of publishing house
GB - UNITED KINGDOM
Number of pages
5
Pages from-to
2734-2738
UT code for WoS article
000915297800001
EID of the result in the Scopus database
2-s2.0-85146837540