Silicon-vacancy centers in ultra-thin nanocrystalline diamond films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499763" target="_blank" >RIV/68378271:_____/18:00499763 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21230/18:00322436

Result on the web

<a href="http://dx.doi.org/10.3390/mi9060281" target="_blank" >http://dx.doi.org/10.3390/mi9060281</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/mi9060281" target="_blank" >10.3390/mi9060281</a>

Result language

angličtina

Original language name

Silicon-vacancy centers in ultra-thin nanocrystalline diamond films

Original language description

Here we report the optoelectronic investigation of shallow silicon vacancy (SiV) color centers in ultra-thin (7–40 nm) nanocrystalline diamond (NCD) films. We show that hydrogenated ultra-thin NCD films exhibit no or lowered SiV photoluminescence (PL) and relatively high negative surface photovoltage (SPV) which is ascribed to non-radiative electron transitions from SiV to surface-related traps. Higher SiV PL and low positive SPV of oxidized ultra-thin NCD films indicate an efficient excitation—emission PL process without significant electron escape, yet with some hole trapping in diamond surface states. Decreasing SPV magnitude and increasing SiV PL intensity with thickness, in both cases, is attributed to resonant energy transfer between shallow and bulk SiV. We also demonstrate that thermal treatments (annealing in air or in hydrogen gas), are also applicable to ultra-thin NCD films in terms of tuning their SiV PL and surface chemistry.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Micromachines

ISSN

2072-666X

e-ISSN

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Volume of the periodical

9

Issue of the periodical within the volume

6

Country of publishing house

CH - SWITZERLAND

Number of pages

11

Pages from-to

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UT code for WoS article

000436506300027

EID of the result in the Scopus database

2-s2.0-85048420735