Ultrathin nanocrystalline diamond films with silicon vacancy color centers via seeding by 2 nm detonation nanodiamonds
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00482915" target="_blank" >RIV/68378271:_____/17:00482915 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/17:00315085 RIV/00216208:11310/17:10367949 RIV/60461373:22330/17:43913755
Result on the web
<a href="http://dx.doi.org/10.1021/acsami.7b14436" target="_blank" >http://dx.doi.org/10.1021/acsami.7b14436</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.7b14436" target="_blank" >10.1021/acsami.7b14436</a>
Alternative languages
Result language
angličtina
Original language name
Ultrathin nanocrystalline diamond films with silicon vacancy color centers via seeding by 2 nm detonation nanodiamonds
Original language description
Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5−6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4−6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 1013 cm−2), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiOx substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Materials and Interfaces
ISSN
1944-8244
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
44
Country of publishing house
US - UNITED STATES
Number of pages
12
Pages from-to
38842-38853
UT code for WoS article
000415140800073
EID of the result in the Scopus database
2-s2.0-85033594722