Si-related color centers in nanocrystalline diamond thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00439267" target="_blank" >RIV/68378271:_____/14:00439267 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssb.201451177" target="_blank" >http://dx.doi.org/10.1002/pssb.201451177</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201451177" target="_blank" >10.1002/pssb.201451177</a>

Result language
angličtina
Original language name
Si-related color centers in nanocrystalline diamond thin films
Original language description
The successful growth of nanocrystalline diamond (NCD) thin films with optically active Si-related color centers was realized on glass and molybdenum substrates by the microwave plasma chemical vapor deposition (CVD) with focused or linear antenna plasmareactors. Diamond coatings were characterized by Raman spectroscopy, scanning electron microscopy, and photoluminescence (PL) spectroscopy. Increased of a-Si interlayer thickness resulted in reduction of stress in NCD film and increased renucleation ofNCD films. The PL spectra showed that the Si-color center is only observed in the focused plasma system. The influence of the substrate material as well as the a-Si interlayer on the density of Si-related color center was not confirmed in our setup.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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